Engineering Nanowire n-MOSFETs at <formula formulatype="inline"><tex Notation="TeX">$L_{g}&lt;8~{\rm nm}$</tex></formula>

Engineering Nanowire n-MOSFETs at L-g < 8 nm

As metal-oxide-semiconductor field-effect transistors (MOSFETs) channel lengths (L g) are scaled to lengths shorter than L g < 8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario, a heavier transport mass can be used to limit source-drain (S-D) tunneling. Taking InAs and Si as examples, it is shown that different heavier transport masses can be eng...

Utilizing the unique properties of nanowire MOSFETs for RF applications.

Nanostructures have attracted a great deal of attention because of their potential usefulness for high density applications. More importantly, they offer excellent avenues for improved scaling beyond conventional approaches. Less attention has been paid to their intrinsic potential for distinct circuit applications. Here we discuss how a combination of 1-D transport, operation in the quantum ca...

Single-electron devices based on silicon nanowire MOSFETs

Silicon nanowire MOSFETs are expected to be key components for future nanoelectronics. Based on the top-down approach using MOSFET technology, we have shown that their ultimately scaled channel and excellent gate control provide us with the opportunity to realize single-electron manipulation/detection devices, in which individual electrons can be transferred, manipulated, and detected in a well...

Strain-Induced Band Gap Engineering in Selectively Grown GaN-(Al,Ga)N Core-Shell Nanowire Heterostructures.

We demonstrate the selective area growth of GaN-(Al,Ga)N core-shell nanowire heterostructures directly on Si(111). Photoluminescence spectroscopy on as-grown nanowires reveals a strong blueshift of the GaN band gap from 3.40 to 3.64 eV at room temperature. Raman measurements relate this shift to compressive strain within the GaN core. On the nanoscale, cathodoluminescence spectroscopy and scann...

Electrical behavior of ultra - thin body silicon - on - insulator n - MOSFETs at a high operating temperature